报告人：德国Ilmenau大学，Rngelow教授

日期：2018年11月13日（星期二）

时间：上午10：00至11：00

地点：复旦大学遗传楼308室

联系人：陈宜方（15221877889）

欢迎感兴趣的老师和同学参加！

Introduction of Speaker:

Professor Rangelow, born in 1950, Director of Institute for micro- and nanoelectronics of TU Ilmenau in Germany. He is awell-known scientist in the field of micro-and nanotechnologyanda major participants in the EU Quantum Declaration Program.

He obtained Ph.D. degree in physics from Wroclaw University of Technology in 1982. After his postdoctoral fellow working at University Münster and Institute for Microsystem Technology FhG in Berlin, he started his independent research career as Senior Scientist at Kassel since 1985. Since 2005, he was promoted to full Professor at Technical University of Ilmenau. And one year later he was nominated as Director of Institute for Micro- and Nanoelectronics of TU Ilmenau.

At the beginning of his scientific career, Prof. Rangelow devoted his works on micro- and nanomachining technology and got outstanding results in plasma based pattern transfer. He is currently working on a pattern transfer of a sub-10 nm structure and already holds a world best result in anisotropy and selectivity for nanoelectronic devices. As Head of the Institute at University of Ilmenau he was working on micro and nanofabrication methods and started remarkable European Initiatives on developing novel Scanning Probes and Technology. He collaborated with several national and international research groups (like UC Berkeley, UC Santa Barbara, MIT, Oxford, Imperial College London etc.) and renowned high-tech companies (like Infineon and Zeiss). He attracted and managed 18.6 M€ from various sources (EU, BMBF, VW, DFG) to fund his research.

So far he has published more than 350 scientific articles in peer-reviewed journals. In total his work received more than 3000 citations, and consequently belongs to the strongly cited research in micro and nanofabrication. He gave more than 110 invited talks/colloquia at international conferences. He is also the inventor of more than 60 patents worldwide. With his solid background in plasma technology and semiconductor physics, Prof. Rangelow developed modern MENS sensors required in high-resolution scanning probe microscopy, patented a new method for mix & match lithography increasing significantly the throughput of the FE-SPL (field emission scanning probe lithography), and much of his recent efforts have focused upon the improvement of atomic force microscopy as a tool for creating quantum devices, presenting the very last development in sub-2 nm technology Single Electron Transistors operating at room temperature.

In 2018, together with his partner and inventor, Dr. Zhou Xiangqian, Prof. Ranglow founded Parcan Technology Co., Ltd. in Shenzhen, which is not only committed to the industrialization of the multi-cantilever array lithography technology and precise single-ion implantationtechnology, but also engaged in research and development at the international leading level under the support of Shenzhen City. In 2017 Parcan Technology Co., Ltd. won the “top five” award in the category of advanced manufacturing at the “Entrepreneur Star” competition organized by Shenzhen Nanshan District Government.

International Prizes/Awards/Academy memberships:

1987 Award for best Presentation, Elsevier & MNE Paris

1991 Award for best Presentation, Elsevier & MNE Erlangen

1994 Second Award Presentation, MNE Maastricht

1997 Award for best Presentation, MNE Athena

1998 Award for Nanoscience; APS, EIPBN Chicago

2000 Elsevier Award for best Presentation, MNE Jena 2000

2004 Intern. Conf. on Microelectronics, APS, AVS, Best Presentation

2005 GINO Innovation Award

2006 Nordhessen Award for Invention “ARCH‐IR‐Sensor”

2011 Nomination for Gusi Peace Prize International

2013 AMA Innovation Award

2015 Humboldt Professor Fellowship, University of Breslau

Abstract:

Professor Rangelow has been working on the development of innovative processes and equipment for micro/nanostructures intherecent years, using a combination of probe lithography and ion implantation techniques to fabricate nanoscale functional devices. Hedeveloped a new processing system for manufacturing high-performance nano-devices with the dimensions smaller than the present processing limits of semiconductor fabrications. This was recognized as a novel procedurefor developing room temperature single-electron devices (structures below 2 nm), optical micro lenses, solid-state quantum computers, etc. It provides a stable, accurate and efficient manufacturing methods to break through the global bottlenecks in micro-nano fabrication and semiconductor devices.

The latest research achievement of Professor Rangelow's team is multi-cantilever array technology, in which each probe can be operated simultaneously. And therefore the range and speed of micro-nanostructure characterization and preparationhave beensignificantly increased.

In 2017, Professor Rangelow and his partners fromImperial College in London achievedsignificant progress in the field of quantum devices fabrication by using scanning probe lithography.Successfully they developed single-electron transistors with a size of less than 2 nm,which can work at room temperature. Single-electron transistors are recognized as the most promising nanoelectronic functional devices for the next generation of low-power, high-density ultra-large-scale integrated circuits.

Another revolutionary invention by Professor Rangelow is the single-ionpreciseimplantation technology, through which the type, quantity and position of implanted impurities can be precisely and effectively controlled in a range of onenanometer. Totally different from the large amount of other research work done so far, which is related to doing atomic handling on surface or in situ observation of surface chemical reaction at the atomic and molecular level, the single ion implantation technique by Professor Rangelow realizedto implant and to position atoms accuratelyand furthermoreto fabricate atomic array structures and functional devices in athree dimensional way!The team at the Centre for Quantum Computation and Communication Technology at the University of New South Wales (UNSW) in Sydney has fabricatedthe quantum logic gates based on silicon quantum bits at the single atomic levelby means of the single-ion precise implantation process developed by the Rangelow’s team. For the first time, it makes it possible tocouple two Q-bitsin an innovative way.